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SQ2303CES-T1_BE3 Vishay Semiconductors
*For representation only.

SQ2303CES-T1_BE3

MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,667
Units In Stock
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 59 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

SQ2303CES-T1_BE3 is a mosfets manufactured by Vishay Semiconductors. It features a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V and a current, continuous drain (id) @ 25°C of 2.5A (Tc). This part has a typical lead time of 59 Days from factory. Simplytronix stocks SQ2303CES-T1_BE3 for same-day shipping with genuine parts guaranteed.

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