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SQ2325CES-T1_GE3

MOSFETs P-CHANNEL 150-V (D-S) 175C MOSFET
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 257 pF @ 50 V
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Product Attributes
Packaging
Standard Pack Qty
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,590
In Stock
Packaging:
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHS
Lifecycle
Reported Lead Time (from factory)
Documentation
Not Available
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