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SQ2303CES-T1_BE3 Vishay Semiconductors
*For representation only.

SQ2303CES-T1_BE3

MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,667
Units In Stock
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 59 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

SQ2303CES-T1_BE3 by Vishay Semiconductors is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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