| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 11.6A, 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2451 pF @ 100 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PDFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 84 Days (from factory) |
| Country / Standard | Code |
|---|---|
| TARIC | 8541290000 |
| ECCN | EAR99 |
IS20M028S1C is a mosfets manufactured by iDEAL Semiconductor. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V and a current, continuous drain (id) @ 25°C of 45A (Tc). This part has a typical lead time of 84 Days from factory. Simplytronix stocks IS20M028S1C for same-day shipping with genuine parts guaranteed.