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iS20M028S1C iDEAL Semiconductor
*For representation only.

iS20M028S1C

MOSFETs
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id 4.1V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2451 pF @ 100 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,737
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
TARIC 8541290000
ECCN EAR99
Product Overview

IS20M028S1C is a mosfets manufactured by iDEAL Semiconductor. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V and a current, continuous drain (id) @ 25°C of 45A (Tc). This part has a typical lead time of 84 Days from factory. Simplytronix stocks IS20M028S1C for same-day shipping with genuine parts guaranteed.

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