*For representation only.
iS20M028S1P
MOSFETs SuperQ power MOSFET 200 V, 25m? max, normal threshold level in TO-220 package
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2425 pF @ 100 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 50 |
14,524
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 84 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
IS20M028S1P is a mosfets manufactured by iDEAL Semiconductor. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V and a current, continuous drain (id) @ 25°C of 40A (Tc). This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IS20M028S1P for same-day shipping with genuine parts guaranteed.
