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SQA403CEJW-T1_GE3 Vishay
*For representation only.

SQA403CEJW-T1_GE3

Vishay Active
MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 10 V
Power Dissipation (Max) 13.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerPAK®SC-70W-6
Package / Case PowerPAK® SC-70-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,365
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

SQA403CEJW-T1_GE3 by Vishay is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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