*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,545
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
SIZF928DT-T1-GE3 is a mosfets manufactured by Vishay / Siliconix. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of - and a drain to source voltage of 30V. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SIZF928DT-T1-GE3 for same-day shipping with genuine parts guaranteed.
