*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 425pF @ 10V |
| Power - Max | 1.9W (Ta), 7.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,387
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
SIA938DJT-T1-GE3 is a mosfets manufactured by Vishay / Siliconix. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a drain to source voltage of 20V and a current, continuous drain (id) @ 25°C of 4.5A (Ta), 4.5A (Tc). This part has a typical lead time of 0 Days from factory. Simplytronix stocks SIA938DJT-T1-GE3 for same-day shipping with genuine parts guaranteed.
