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VS-3C40CP07L-M3 Vishay Semiconductors
*For representation only.

VS-3C40CP07L-M3

SiC Schottky Diodes RECT 650V 20A RDL POWER SIC
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 20A (DC)
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
📦 Product Attributes
Packaging Tube
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,547
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 65 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
TARIC 8541100000
CAHTS 8541100090
USHTS 8541100080
ECCN EAR99
Product Overview

VS-3C40CP07L-M3 by Vishay Semiconductors is a sic schottky diodes designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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