*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 45 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 22.5 V |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DSOP Advance |
| Package / Case | 8-PowerVDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
8,294
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 129 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
TPW1R005PL,L1Q is a mosfets manufactured by Toshiba. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 45 V and a current, continuous drain (id) @ 25°C of 300A (Tc). This part has a typical lead time of 129 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks TPW1R005PL,L1Q for same-day shipping with genuine parts guaranteed.
