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TPC8134,LQ(S Toshiba
*For representation only.

TPC8134,LQ(S

MOSFETs N-Ch -40V FET 1650pF -5A 1.9W 20nC
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,937
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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