*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 10V |
| Power - Max | 250mW |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
8,265
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
SSM6N35AFE,LF is a mosfets manufactured by Toshiba. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, 1.2V Drive and a drain to source voltage of 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SSM6N35AFE,LF for same-day shipping with genuine parts guaranteed.
