*For representation only.
CSD88539NDT
Texas Instruments
Active
MOSFETs 60V Dual NCh NexFET Pwr MOSFET A 595-CSD A 595-CSD88539ND
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 741pF @ 30V |
| Power - Max | 2.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 250 |
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Alternate / Replacement Parts
| Alternate Packaging | CSD88539ND |
| Suggested Replacement | CSD88539ND |
9,439
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 84 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8542390000 |
| USHTS | 8541290065 |
| JPHTS | 8542390990 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
CSD88539NDT by Texas Instruments is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.