*For representation only.
SiC Schottky Diodes 650 V, 6A High surge Silicon Carbide power Schottky diode
SiC Schottky Diodes 650 V, 6A High surge Silicon Carbide power Schottky diode
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 130 µA @ 650 V |
| Capacitance @ Vr, F | 670pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 175°C |
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Product Attributes
| Packaging | |
| Standard Pack Qty |
9,808
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | |
| Lifecycle | |
| Lead Time | (from factory) |
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Documentation
Datasheet not available
