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EM6K34T2CR ROHM Semiconductor
*For representation only.

EM6K34T2CR

MOSFETs 0.9V Drive Nch MOSFET
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 0.9V Drive
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Power - Max 120mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 8000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,970
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 168 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

EM6K34T2CR by ROHM Semiconductor is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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