*For representation only.
SCT4050KEC11
ROHM Semiconductor
Active
SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1703 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 136W |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
12,703
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
SCT4050KEC11 by ROHM Semiconductor is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
