*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta), 98A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2943 pF @ 800 V |
| Power Dissipation (Max) | 3.7W (Ta), 468W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
6,284
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
NVBG020N120SC1 is a sic mosfets manufactured by onsemi. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V and a current, continuous drain (id) @ 25°C of 8.6A (Ta), 98A (Tc). This part has a typical lead time of 126 Days from factory. Simplytronix stocks NVBG020N120SC1 for same-day shipping with genuine parts guaranteed.
