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MGD3100BM58EK NXP Semiconductors
*For representation only.

MGD3100BM58EK

Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters
Technical Specifications
Driven Configuration Half-Bridge
Channel Type Single
Number of Drivers 1
Gate Type IGBT, MOSFET (N-Channel)
Voltage - Supply 5V
Current - Peak Output (Source, Sink) 15A, 15A
Operating Temperature -40°C ~ 125°C (TA)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package 32-SOIC
📦 Product Attributes
Packaging Tube
Standard Pack Qty 42
🔁 Alternate / Replacement Parts
Alternate Packaging MGD3100BM58EKR2
Suggested Replacement
6,791
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
Product Overview

MGD3100BM58EK by NXP Semiconductors is a galvanically isolated gate drivers designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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