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PSMN8R3-40YS,115 Nexperia
*For representation only.

PSMN8R3-40YS,115

MOSFETs SOT669 N-CH 40V 70A
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1215 pF @ 20 V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,812
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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