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PSMN1R8-80SSFJ Nexperia
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PSMN1R8-80SSFJ

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MOSFETs SOT1235 N-CH 80V 270A
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 222 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15319 pF @ 40 V
FET Feature -
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK88 (SOT1235)
Package / Case SOT-1235
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,683
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

PSMN1R8-80SSFJ is a mosfets manufactured by Nexperia. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V and a current, continuous drain (id) @ 25°C of 270A (Tc). This part has a typical lead time of 365 Days from factory. Simplytronix stocks PSMN1R8-80SSFJ for same-day shipping with genuine parts guaranteed.

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