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2N7002PV,115 Nexperia
*For representation only.

2N7002PV,115

MOSFETs 2N7002PV/SOT666/SOT6
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 330mW
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,621
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 56 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
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