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MT47H256M8EB-25E:C Micron
*For representation only.

MT47H256M8EB-25E:C

Micron Last Time Buy
DRAM DDR2 2Gbit 8 60/99 FBGA 1 CT
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 60-TFBGA
Supplier Device Package 60-FBGA (9x11.5)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 1320
🔁 Alternate / Replacement Parts
Alternate Packaging MT47H256M8EB-25E:C TR
Suggested Replacement
14,596
Units In Stock
📦 Tray
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🔑 Key Specifications
Category DRAM
RoHS RoHS Compliant
Lifecycle Verify Status with Factory
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542329010
CAHTS 8542320020
USHTS 8542320036
MXHTS 8542320299
ECCN EAR99
Product Overview

MT47H256M8EB-25E:C by Micron is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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