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MT53E256M32D1KS-046 IT:L Micron
*For representation only.

MT53E256M32D1KS-046 IT:L

Micron Obsolete
DRAM LPDDR4 8Gbit 32 200/264 VFBGA 1 IT
Technical Specifications
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4
Memory Size 8Gbit
Memory Organization 256M x 32
Memory Interface Parallel
Clock Frequency 2.133 GHz
Write Cycle Time - Word, Page -
Voltage - Supply 1.06V ~ 1.17V
Operating Temperature -40°C ~ 95°C (TC)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 200-VFBGA
Supplier Device Package 200-VFBGA (10x14.5)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 1360
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,155
Units In Stock
📦 Tray
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🔑 Key Specifications
Category DRAM
RoHS RoHS Compliant
Lifecycle Verify Status with Factory
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542329010
CAHTS 8542320020
USHTS 8542320036
MXHTS 8542320299
ECCN EAR99
Product Overview

MT53E256M32D1KS-046 IT:L by Micron is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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