Search Products

Menu
CG2H40010P MACOM
*For representation only.

CG2H40010P

MACOM Active
GaN FETs 10W, 6.0GHz, GaN HEMT G28V4 (CG2H40010P)
Technical Specifications
Technology HEMT
Frequency 8GHz
Gain 16.7dB
Voltage - Test 28 V
Current Rating (Amps) -
Noise Figure -
Current - Test 200 mA
Power - Output 10W
Voltage - Rated 120 V
Mounting Type Surface Mount
Package / Case 440196
Supplier Device Package 440196
📦 Product Attributes
Packaging Tray
Standard Pack Qty 80
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,607
Units In Stock
📦 Tray
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS
USHTS 8541290055
ECCN EAR99
Product Overview

CG2H40010P by MACOM is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

Similar Products
CGH40180PP
CGH40180PP MACOM
GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
CGHV35400F1
CGHV35400F1 MACOM
GaN FETs Amplifier,400W,GaN HEMT, 50V,2.9-3.5GHz
CGH60008D-GP4
CGH60008D-GP4 MACOM
GaN FETs GaN HEMT Die DC-6.0GHz, 8 Watt
CGH40045F
CGH40045F MACOM
GaN FETs GaN HEMT DC-4.0GHz, 45 Watt
CG2H40010F
CG2H40010F MACOM
GaN FETs GaN HEMT DC-8.0GHz, 10 Watt