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IS42S16400N-6BLI ISSI
*For representation only.

IS42S16400N-6BLI

ISSI Active
DRAM 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
Technical Specifications
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 64Mbit
Memory Organization 4M x 16
Memory Interface LVTTL
Clock Frequency 166 MHz
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TFBGA
Supplier Device Package 54-TFBGA (8x8)
📦 Product Attributes
Packaging
Standard Pack Qty 348
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,009
Units In Stock
📦
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🔑 Key Specifications
Category DRAM
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8542320020
USHTS 8542320002
MXHTS 8542320299
ECCN EAR99
Product Overview

IS42S16400N-6BLI by ISSI is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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