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IDV20E65D1XKSA1 Infineon Technologies
*For representation only.

IDV20E65D1XKSA1

Schottky Diodes & Rectifiers IGBT PRODUCTS
Technical Specifications
Technology Standard
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 28A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 42 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package PG-TO220-2 Full Pack
Operating Temperature - Junction -40°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,314
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Schottky Diodes & Rectifiers
RoHS RoHS Compliant
Lifecycle
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

IDV20E65D1XKSA1 by Infineon Technologies is a schottky diodes & rectifiers designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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