| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 40 V |
| Power Dissipation (Max) | 2.5W (Ta), 66W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Alternate Packaging | BSC123N08NS3 G |
| Suggested Replacement |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
BSC123N08NS3GATMA1 is a mosfets manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V and a current, continuous drain (id) @ 25°C of 11A (Ta), 55A (Tc). This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BSC123N08NS3GATMA1 for same-day shipping with genuine parts guaranteed.