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IST026N10NM5AUMA1 Infineon Technologies
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IST026N10NM5AUMA1

MOSFETs IFX FET >80 - 100V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 248A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 148µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 313W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-5-4
Package / Case 5-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,808
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle
Lead Time 98 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
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