Search Products

Menu
IRFPW4468PBFXKSA1 Infineon Technologies
*For representation only.

IRFPW4468PBFXKSA1

MOSFETs StrongIRFET Power MOSFET, 100 V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 29000 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta), 517W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-U06
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,312
Units In Stock
📦 Tube
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Similar Products
IQE036N08NM6SCATMA1
IQE036N08NM6SCATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V
IPT009N08NM6ATMA1
IPT009N08NM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in TOLL
IMW40R025M2HXKSA1
IMW40R025M2HXKSA1 Infineon Technologies
MOSFETs SILICON CARBIDE MOSFET
IAUTN15S6N025ATMA1
IAUTN15S6N025ATMA1 Infineon Technologies
MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLL...