Search Products

Menu
No Image
*For representation only.

IRFP2907PBFXKMA1

PLANAR 40<-<100V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 125A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 620 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 470W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-901
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 400
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,913
Units In Stock
📦 Tube
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
ECCN EAR99
Product Overview

IRFP2907PBFXKMA1 is a component manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 75 V and a current, continuous drain (id) @ 25°C of 209A (Tc). This part has a typical lead time of 182 Days from factory. Simplytronix stocks IRFP2907PBFXKMA1 for same-day shipping with genuine parts guaranteed.

Similar Products
No Image
BSS139IXUSA1 Infineon Technologies
SMALL SIGNAL MOSFETS
No Image
BSS138IXUSA1 Infineon Technologies
SMALL SIGNAL MOSFETS
No Image
BSS169IXUSA1 Infineon Technologies
SMALL SIGNAL MOSFETS
IKQ150N75EH7XKSA1
IKQ150N75EH7XKSA1 Infineon Technologies
High speed and low saturation voltage 750 V TRENCHSTOP IGB...