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IPTC011N08NM5ATMA1 Infineon Technologies
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IPTC011N08NM5ATMA1

MOSFETs IFX FET > 60-80V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 42A (Ta), 408A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 40 V
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-16-2
Package / Case 16-PowerSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,713
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle
Lead Time 15 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
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