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IPD50N06S4L08ATMA2 Infineon Technologies
*For representation only.

IPD50N06S4L08ATMA2

MOSFETs MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 4780 pF @ 25 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,890
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 63 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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