| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Power - Max | 170 W |
| Switching Energy | 800µJ |
| Input Type | Standard |
| Gate Charge | 120 nC |
| Td (on/off) @ 25°C | 17ns/194ns |
| Test Condition | 400V, 20A, 14.6Ohm, 15V |
| Reverse Recovery Time (trr) | 112 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-1 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Alternate Packaging | IKW20N60H3 |
| Suggested Replacement |
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
IKW20N60H3FKSA1 by Infineon Technologies is a igbts designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.