*For representation only.
IGI65D1414A3MSXUMA1
Infineon Technologies
Active
GaN FETs Two 140 mohm / 650 V GaN transistors in half-bridge configuration
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Technical Specifications
| Output Configuration | Half Bridge |
| Applications | AC Motors, DC Motors, DC-DC Converters, General Purpose |
| Load Type | Inductive, Capacitive, Resistive |
| Technology | NMOS |
| Rds On (Typ) | 140mOhm |
| Voltage - Load | 650V (Max) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 32-PowerTQFN |
| Supplier Device Package | PG-TIQFN-32-1 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
14,292
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8542390090 |
| MXHTS | 8542399999 |
| ECCN | EAR99 |
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Product Overview
IGI65D1414A3MSXUMA1 by Infineon Technologies is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.
