*For representation only.
IGI60L2727B1MXUMA1
Gate Drivers 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
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Technical Specifications
| V GaN transistor in half-bridge configuration with integrated level | shift gate driver and bootstrap diode |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,662
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Gate Drivers |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 26 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8542390090 |
| MXHTS | 8542399999 |
| ECCN | EAR99 |
