*For representation only.
FF3MR12KM1HPHPSA1
Infineon Technologies
Active
MOSFET Modules CoolSiC MOSFET half bridge module 1200 V
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 220A |
| Rds On (Max) @ Id, Vgs | 4.44mOhm @ 280A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 112mA |
| Gate Charge (Qg) (Max) @ Vgs | 800nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 24200pF @ 800V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-62MMHB |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 8 |
10,926
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 14 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
FF3MR12KM1HPHPSA1 by Infineon Technologies is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
