| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 33mA |
| Gate Charge (Qg) (Max) @ Vgs | 237nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 7210pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | Tray |
| Standard Pack Qty | 18 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 10 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
F48MXTR12C2M2QH11BPSA1 is a mosfet modules manufactured by Infineon Technologies. It features a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Full Bridge), a FET feature of - and a drain to source voltage of 1200V (1.2kV). This part has a typical lead time of 10 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks F48MXTR12C2M2QH11BPSA1 for same-day shipping with genuine parts guaranteed.