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BSL211SP Infineon Technologies
*For representation only.

BSL211SP

MOSFETs P-Ch -20V -4.7A TSOP-6 OptiMOS P
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 654 pF @ 15 V
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BSL211SPH6327XTSA1
Suggested Replacement BSL211SPH6327XTS
11,593
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 56 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

BSL211SP by Infineon Technologies is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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