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DMN3016LK3-13 Diodes Incorporated
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DMN3016LK3-13

MOSFETs 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1415 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,856
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

DMN3016LK3-13 by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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