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DMN2020LSN-7 Diodes Incorporated
*For representation only.

DMN2020LSN-7

MOSFETs MOSFET,N-CHANNEL
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1149 pF @ 10 V
FET Feature -
Power Dissipation (Max) 610mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SC-59-3
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,548
Units In Stock
📦 Reel
Request a Quote →
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

DMN2020LSN-7 is a mosfets manufactured by Diodes Incorporated. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V and a current, continuous drain (id) @ 25°C of 6.9A (Ta). This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DMN2020LSN-7 for same-day shipping with genuine parts guaranteed.

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