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DMC31D5UDA-7B

MOSFETs MOSFET BVDSS: 25V-30V
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 22.6pF @ 15V
Power - Max 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package X2-DFN0806-6
Product Attributes
Packaging Reel
Standard Pack Qty10000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,765
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 168 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541210000
USHTS 8541210095
TARIC 8541290000
ECCN EAR99
Product Overview

DMC31D5UDA-7B by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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